发明名称 Memory device and method for storing bits in non-adjacent storage locations in a memory array
摘要 The preferred embodiments described herein provide a memory device and method for storing bits in non-adjacent storage locations in a memory array. In one preferred embodiment, a memory device is provided comprising a register and a memory array. A plurality of bits provided to the memory device are stored in the register in a first direction, read from the register in a second direction, and then stored in the memory array. Bits that are adjacent to one another when provided to the memory device are stored in non-adjacent storage locations in the memory array. When the plurality of bits takes the form of an ECC word, the storage of bits in non-adjacent storage locations in the memory array reduces the likelihood of an uncorrectable multi-bit error. In another preferred embodiment, a memory device is provided comprising a memory array and a register comprising a first set of wordlines and bitlines and a second set of wordlines and bitlines arranged orthogonal to the first set. In yet another preferred embodiment, memory decoders or a host device is used to store bits in non-adjacent storage locations in a memory array of a memory device. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another.
申请公布号 US6928590(B2) 申请公布日期 2005.08.09
申请号 US20010024647 申请日期 2001.12.14
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 ILKBAHAR ALPER;SCHEUERLEIN ROY E.;BOSCH DEREK J.
分类号 G06F11/00;G06F11/10;H04B1/74;(IPC1-7):G06F11/00 主分类号 G06F11/00
代理机构 代理人
主权项
地址