| 发明名称 |
Semiconductor light-emitting device for optical communications |
| 摘要 |
A semiconductor light-emitting device of this invention includes at least a first cladding layer formed on a substrate, a light-emitting structure including an active layer made of In<SUB>1-X-Y</SUB>Ga<SUB>X</SUB>Al<SUB>Y</SUB>N (0<=X, Y<=1, 0<=X+Y<1) and formed on the first cladding layer, and a second cladding layer formed on the light-emitting structure. The active layer is made of a material with a small Auger effect and a small dependency of its band gap energy on environment temperature.
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| 申请公布号 |
US6927426(B2) |
申请公布日期 |
2005.08.09 |
| 申请号 |
US20030426464 |
申请日期 |
2003.04.30 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MATSUOKA TAKASHI;OKAMOTO HIROSHI |
| 分类号 |
H01L27/15;H01L33/08;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L27/15 |
| 代理机构 |
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