Hall-effect device comprising four lateral Hall elements

摘要

A lateral Hall element includes a substrate (1), a first-conductivity type active layer (2) formed on the substrate, a first second-conductivity type semiconductor layer (3) formed to surround the first-conductivity type active layer and formed to a depth to reach the substrate, a pair of first first-conductivity type semiconductor layers (41, 42) of high impurity concentration selectively formed with a preset distance apart from each other on the surface of the first-conductivity type active layer, current supply electrodes (51, 52) respectively formed on the pair of first first-conductivity type semiconductor layers, a pair of second first-conductivity type semiconductor layers (61, 62) of high impurity concentration formed with a preset distance apart from each other on the surface of the first-conductivity type active layer in position different from the first first-conductivity type semiconductor layers, sensor electrodes (71, 72) respectively formed on the pair of second first-conductivity type semiconductor layers, and a plurality of second second-conductivity type semiconductor layers (81 to 83, 101 to 103) formed on the surface of the first-conductivity type active layer in position different from the first and second first-conductivity type semiconductor layers.