MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD USING THE SAME, MAGNETIC RECORDING DEVICE, AND MAGNETORESISTANCE EFFECT TYPE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element (MR) that is superior in MR ratio and heat resistance. SOLUTION: At least one of magnetic layers includes a ferromagnetic material M-X indicated by an expression M100-aXa. In this case, M is at least one type selected from Fe, Co, and Ni, and X is shown by an expression X1bX2cX3d. In this case, X1is at least one type selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au, and X2is at least one type selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn, and lanthanoid, and X3is at least one type selected from Si, B, C, N, O, P, and S. a, b, c, and D are numeric values that meet 0.05≤a≤60, 0≤b≤60, 0≤c≤30, 0≤d≤20, and a=b+c+d. COPYRIGHT: (C)2005,JPO&NCIPI