发明名称 |
METAL PATTERN AND PROCESS FOR PRODUCING THE SAME |
摘要 |
Metal pattern (13') obtained through formation on a substrate surface and etching, which metal pattern (13') has masking film (18) formed through adsorption of a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n-: n is a natural number) on a metal film surface and penetrating of a molecule having mercapto (-SH) or disulfido (-SS-) into interstices between molecules constituting the monomolecular film. This metal pattern is produced by forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n-: n is a natural number) on a metal film surface; coating the surface of the monomolecular film with a solution in which a molecule having mercapto (-SH) or disulfido (-SS-) is dissolved so that the molecule having mercapto (-SH) or disulfido (-SS-) penetrates into interstices between molecules constituting the monomolecular film to thereby form a masking film; and exposing the metal film surface to an etching solution to thereby waste metal region devoid of the masking film. |
申请公布号 |
WO2005069705(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
WO2005JP00267 |
申请日期 |
2005.01.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAKAGAWA, TOHRU |
发明人 |
NAKAGAWA, TOHRU |
分类号 |
C23F1/02;C23F1/16;C23F1/18;C23F1/30;C25D5/02;H01L21/033;H01L21/3213;H01L51/00;H05K3/06 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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