发明名称 METAL PATTERN AND PROCESS FOR PRODUCING THE SAME
摘要 Metal pattern (13') obtained through formation on a substrate surface and etching, which metal pattern (13') has masking film (18) formed through adsorption of a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n-: n is a natural number) on a metal film surface and penetrating of a molecule having mercapto (-SH) or disulfido (-SS-) into interstices between molecules constituting the monomolecular film. This metal pattern is produced by forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n-: n is a natural number) on a metal film surface; coating the surface of the monomolecular film with a solution in which a molecule having mercapto (-SH) or disulfido (-SS-) is dissolved so that the molecule having mercapto (-SH) or disulfido (-SS-) penetrates into interstices between molecules constituting the monomolecular film to thereby form a masking film; and exposing the metal film surface to an etching solution to thereby waste metal region devoid of the masking film.
申请公布号 WO2005069705(A1) 申请公布日期 2005.07.28
申请号 WO2005JP00267 申请日期 2005.01.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAKAGAWA, TOHRU 发明人 NAKAGAWA, TOHRU
分类号 C23F1/02;C23F1/16;C23F1/18;C23F1/30;C25D5/02;H01L21/033;H01L21/3213;H01L51/00;H05K3/06 主分类号 C23F1/02
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