| 摘要 |
An InGaN active layer (22) is formed on a sapphire substrate (20). A p-side electrode (26) is formed on the InGaN active layer (22) to supply an electric current to this InGaN active layer (22). The p-side electrode (26) includes ‘ an Ni layer (32) for forming an ohmic contact with a p-GaN layer (24), ‘¡ an Mo layer (33) having a barrier function of preventing diffusion of impurities, ‘¢ an Al layer (34) as a high-reflection electrode, ‘£ a Ti layer (35) having a barrier function, and ‘¤ an Au layer (36) for improving the contact with a submount on a lead frame. The p-side electrode (26) having this five-layered structure realizes an ohmic contact and high reflectance at the same time. |
