| 发明名称 |
Non-polar (a1,b,in,ga)n quantum wells |
| 摘要 |
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs. |
| 申请公布号 |
AU2003293497(A1) |
申请公布日期 |
2005.07.21 |
| 申请号 |
AU20030293497 |
申请日期 |
2003.12.11 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
MICHAEL D. CRAVEN;STEVEN P. DENBAARS |
| 分类号 |
C30B25/02;C30B25/04;C30B25/10;C30B25/18;C30B29/40;C30B29/60;H01L21/00;H01L21/20;H01L21/205;H01L29/15;H01L29/20;H01L33/00 |
主分类号 |
C30B25/02 |
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