| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for synthesizing a fluorine-containing metal complex of high volatility and stability useful as a raw material for forming thin film by chemical vapor deposition(CVD). SOLUTION: The method for synthesizing a fluorine-containingβ-diketone complex of Al, In or Ga is provided, comprising the following process: An anhydrous chloride of Al, In or Ga is suspended in an anhydrous aprotic solvent followed by adding a fluorine-containingβ-diketone to carry out a reaction followed by further reaction under a pressure of 1-50 Pa while refluxing at 40-140°C, and a hydrogen chloride gas generated is removed, the upper layer solvent is then removed from the resultant solution separated in two layers followed by adding the same aprotic solvent again and refluxing at 40-140°C and then cooling at -20 to 15°C to deposit crystal. The crystal is then filtered and collected, and the same aprotic solvent is added to the crystal followed by refluxing at 40-140°C and then cooling at -20 to 15°C to deposit the final crystal in the lower layer. COPYRIGHT: (C)2005,JPO&NCIPI
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