发明名称 |
Deep N diffusion for trench IGBT |
摘要 |
<p>An increased conductivity deep diffusion of the same conductivity type as that of the drift region is provided between adjacent trenches of a trench type IGBT and below the trenches to reduce the on resistance components of the drift region resistance and spreading resistance to current flow when the device is turned on. The deep diffusion has a higher concentration than that of the drift region, and has a width of from 4 to 10 microns. The wafer or die has a total width (or thickness) of about 70 to about 300 microns.</p> |
申请公布号 |
EP1755168(A2) |
申请公布日期 |
2007.02.21 |
申请号 |
EP20060016715 |
申请日期 |
2006.08.10 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
FRANCIS, RICHARD;NG, CHIU |
分类号 |
H01L29/732;H01L21/331;H01L29/739 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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