发明名称 Methods, apparatus and systems for wafer-level burn-in stressing of semiconductor devices
摘要 A large-scale support carries semiconductor devices and at least one pair of common conductive regions in communication therewith. Each common conductive region is configured to be electrically connected with both a force contact and a sense contact of stress or test equipment. Such equipment includes at least one pair of force contacts for applying a force voltage across a pair of common conductive regions and, thus, across the support. A corresponding pair of sense contacts facilitates monitoring of a voltage applied across each of the semiconductor devices by the force contacts. Methods and systems for evaluating a voltage that has been applied to two or more semiconductor devices by way of a single pair of force contacts are also disclosed, as are methods and systems for, in response to a measured voltage, modifying the force voltage so that a desired voltage may be applied across each of the semiconductor devices.
申请公布号 US2005156618(A1) 申请公布日期 2005.07.21
申请号 US20050054667 申请日期 2005.02.09
申请人 MARR KENNETH W. 发明人 MARR KENNETH W.
分类号 G01R31/28;(IPC1-7):G01R31/26;G01R31/02 主分类号 G01R31/28
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