| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element and its manufacturing method which prevents cracks from being generated in manufacturing the nitride semiconductor laser element and forms a nitride semiconductor growth layer good in surface flatness to manufacture the laser element at a high yield. SOLUTION: In the nitride semiconductor light emitting element and its manufacturing method, a low defect region having a defect density of 10<SP>6</SP>cm<SP>-2</SP>or less and a trench region with a recess formed in the surface of a nitride semiconductor substrate and the etching angleθbetween the side face of the recess and its bottom side extension line ranges as 75°≤θ≤140°in a sectional view of the recess. This prevents cracks from being generated, suppresses creep-up growth from a bottom side grown part of the trench region to suppress the increase of the film thickness of a side grown part, thereby obtaining a nitride semiconductor laser element with a nitride semiconductor grown layer having good surface flatness at a high yield. COPYRIGHT: (C)2005,JPO&NCIPI
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