| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element which is high in light output efficiency and reliability. <P>SOLUTION: The light emitting element of group III nitride semiconductor comprises a sapphire substrate 101, and a group III nitride semiconductor 110 formed on the substrate 101. The group III nitride semiconductor 120 has a GaN buffer layer 102 and an n-type GaN layer 103 as group III nitride semiconductor layers formed on a first main surface 101a, and an MQW active layer 104 formed thereon. Holes 101h are formed in the substrate 101 to extend from a second main surface 101b to the first main surface 101a, and reach the GaN buffer layer 102 and the n-type GaN layer 103. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
