| 摘要 |
PROBLEM TO BE SOLVED: To provide a process capable of further simplifying a dual-damascene patterning process. SOLUTION: A dual-damascene pattern, including a trench 430 and a via hole 410, is formed by a step of forming a lower conductive pattern 400 on a lower insulation layer 100, a step of forming a first protective film 210, a first insulation film 310, a second insulation film 330, a third insulating film 350, and a second protective film 250 sequentially on the lower conductive pattern 400 and the lower insulating layer 100; a step of forming a via hole 410 penetrating the second protective film 250 and the third insulation film 350 to reach a set depth of the second insulation film 330; a step of forming a trench 430 penetrating the second protective film 250 and the third insulating film 350 to reach a set depth of the second insulation film 330 and, at the same time, extending the via hole 410 to the exposing point of the first protective film 210; and a step of making a lower conductive pattern 150 exposed, by selectively etching the first protective film 210 exposed through the via hole 410. COPYRIGHT: (C)2005,JPO&NCIPI
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