| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a micro structured MOS type solid-state imaging device, capable of fully suppressing the occurrence of image defects. SOLUTION: A photosensitive region with its pixel cells including a plurality of photodiodes 25 for photoconverting and storing an incident light, and reading means 23a, 24a for reading out the signal electric charge of the photodiode arranged two dimensionally is formed on a semiconductor substrate 20. A vertical driving circuit for driving the plurality of pixel cells of the photosensitive region in the line direction and a horizontal driving circuit for driving in the columnar direction, and an amplifying circuit for amplifying an output signal are formed by MOS transistors 24b, 24c, 23c. The method comprises the steps of forming an element isolation region 21, between each element of the photodiode and the plurality of MOS transistors by means of STI, forming a gate oxide film 22 of the MOS transistor in a film thickness of not larger than 10 nm, and heat treating subsequent to the gate forming step of the MOS transistor within the range of temperature which does not exceed 900°C. COPYRIGHT: (C)2005,JPO&NCIPI
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