| 摘要 |
The present invention relates to a leadless, resin sealed semiconductor device structure and manufacturing method. In the semiconductor device according to the present invention, one side of a thin plate made of copper or the like is subjected to half etching, and a plurality of die pad portions ( 3 ) and bonding areas ( 2 ) are formed thereon. A semiconductor chip ( 4 ) is mounted on each of the die pad portions ( 3 ). Then, electrodes ( 5 ) on the respective semiconductor chips and the bonding areas ( 2 ) are electrically connected to each other, and a mounting side of the respective semiconductor chips ( 4 ) is sealed with a molding resin ( 7 ). After that, a conductive board side is gradually and evenly removed, and only the die pad portions ( 3 ) and the bonding areas ( 2 ) (external connecting electrodes) are exposed. Finally, dicing is conducted to obtain a separated semiconductor device as a final form.
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