| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device suitable for high integration in which the characteristics of a transfer gate transistor can be prevented from being deteriorated by suppressing the infiltration of P ions into the channel area of the transfer gate transistor. <P>SOLUTION: The sidewall of a trench formed on a semiconductor substrate 11 is coated with an insulating film 19, and P ions are injected into a 1st conductive film formed by doping As of the storage node electrode of a trench capacitor. The scattering or channeling of P ions on the sidewall and the infiltration of the P ions into the semiconductor substrate 11 are suppressed by the insulating film 19. Then the insulating film 19 with which the sidewall of the trench is coated is removed, and a 2nd conductive film is formed in the trench to form an embedded strap. After forming a separated insulating area 24 in the trench, As and P are diffused into the semiconductor substrate 11 by heat treatment and the storage node electrode is connected to the diffusion layer of the transfer gate transistor. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
