| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which MOSFETs have higher power and high integration of MOSFETs can be easily performed. SOLUTION: The semiconductor device 1 is provided with a plurality of vertical MOSFETs 2 each of which is surrounded by a trench type gate 4. Each vertical MOSFET 2 is provided with a low density base area 30 surrounded by the gate 4. Each vertical MOSFET 2 is provided with three areas, i.e. a 1st source area 21 on the surface layer of the low density base area 30, a high density base area 22 at least on the surface layer of the low density base area 30, and a 2nd source area 23 on the surface layer of the low density base area 30 which are successively arranged in this order. The 1st and 2nd source areas 21, 23 in each vertical MOSFET 2 are mutually discontinuous, the high density base areas 22 in adjacent vertical MOSFETs 2 are mutually discontinuous, and also the source areas 21, 23 in the adjacent vertical MOSFETs 2 are mutually discontinuous. COPYRIGHT: (C)2005,JPO&NCIPI
|
