| 摘要 |
PROBLEM TO BE SOLVED: To enable forming of gate insulating film more quickly, without decreasing the characteristics of a transistor. SOLUTION: In the field effect transistor, an amorphous silicon film of about 50 nm of thickness is formed on a source region 106 and on a region from here to a drain region 107, and a channel layer 108 is formed by processing this. Thereafter, a lower layer insulating film 109 consisting of about 2 nm thickness silicon oxide is formed, in such a way that about 2 nm thickness silicon oxide is deposited by atomic layer deposition (ALD). COPYRIGHT: (C)2005,JPO&NCIPI
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