| 摘要 |
A multilayer structure which provides for optimization of a configuration of a patterned photoresist is designed. A multilayer structure ( 20 ) includes polysilicon ( 10 ), a silicon oxide film ( 11 ) and an anti-reflective film ( 12 ) which are deposited sequentially in the order noted, and a photoresist ( 13 ) is provided on the anti-reflective film ( 12 ), so that light for exposure is incident on the multilayer structure ( 20 ) through the photoresist ( 13 ). First, as a step (i), a range of thickness of the silicon oxide film ( 11 ) is determined so as to allow an absolute value of a reflection coefficient of the light for exposure at an interface between the anti-reflective film ( 12 ) and the photoresist ( 13 ) to be equal to or smaller than a first value. Subsequently, as a step (ii), the range of thickness of the silicon oxide film ( 11 ) determined in the step (i) is delimited so as to allow an absolute value of a phase of the reflection coefficient to be equal to or larger than a second value.
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