SIMULATION MODEL FOR DESIGNING SEMICONDUCTOR DEVICE, METHOD FOR ANALYZING THERMAL DRAIN NOISE, AND METHOD AND DEVICE FOR SIMULATION

摘要

PROBLEM TO BE SOLVED: To provide a simulation model for designing a semiconductor device which enables a precise estimation of thermal drain noises based on the DC characteristics of a MOSFET. SOLUTION: A method for providing the simulation model includes a step (STEP 8) of memorizing a calculated surface potential and a threshold voltage in a memory means, a step (STEP 9) of calculating the thermal drain noises on the basis of data of the surface potential and the threshold voltage which is memorized in the memory means, and a step (STEP 10) of judging whether or not to reduce the thermal drain noises and reflecting a result of the calculation of the thermal drain noises on the simulation model. According to the method, a drain current Idsof the MOSFET is calculated, and the calculated value is given as a substitutive value to an equation of thermal drain noises spectrum density, which is derived from a Nyquist theoretical equation to calculate a thermal drain noises coefficientγof the MOSFET. COPYRIGHT: (C)2005,JPO&NCIPI