发明名称 Method for exposing a photosensitive resist layer with near-field light
摘要 In a method for exposing a photosensitive resist layer with near-field light, a liquid film layer is provided between the photosensitive resist layer and a photomask. The photomask has a light-shielding film containing an opening portion whose width is smaller than the wavelength of light emitted from a light source. The photosensitive resist layer is exposed with near-field light through the opening portion and the liquid film layer.
申请公布号 US2005147922(A1) 申请公布日期 2005.07.07
申请号 US20050070444 申请日期 2005.03.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI KEIJI;OOKAWA HIDEKI;TONOTANI JUNICHI
分类号 G03F7/20;H01L21/027;(IPC1-7):G03F7/00 主分类号 G03F7/20
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