| 摘要 |
A solid-state imaging device is provided, which comprises unit pixel portions. Each unit pixel portion comprises a first conductivity type substrate, a second conductivity type semiconductor layer, a first conductivity type well region, a light receiving region for generating electric charges when irradiated with light, an electric charge accumulation region for accumulating the electric charges from the light receiving region, and a transistor capable of reading out a signal corresponding to an amount of the electric charges accumulated in the electric charge accumulation region. A surface of the light receiving region is covered with an insulating film made of the same material as that of a gate insulating film of the transistor.
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