发明名称 |
METHOD OF MANUFACTURING WAFER SUPPORTER, AND WAFER SUPPORTER MANUFACTURED THEREBY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer supporter which never sticks to a wafer even in a heat treatment in an oxidizing atmosphere, and to provide the wafer supporter manufactured by the same. SOLUTION: The method of manufacturing the wafer supporter for supporting a wafer during heat treatment of the wafer includes a process of forming the wafer supporter into such a shape that can support a silicon wafer by machining a silicon material, and a process of removing processing damages and a contamination layer introduced into the front surface of the supporter formed by machining by chemical etching. The manufacturing method is improved as follows: the chemical etching is conducted with a mixed acid etching aqueous solution containing hydrofluoric acid, nitric acid, and phosphoric acid; and the processing damages and the contamination layer are removed under control of a surface roughness of a part in contact with the wafer. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005183535(A) |
申请公布日期 |
2005.07.07 |
申请号 |
JP20030419631 |
申请日期 |
2003.12.17 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
AOKI YOSHIRO;TAKAHASHI ISAO;KOYADA SAKAE |
分类号 |
H01L21/683;H01L21/31;H01L21/68;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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