METHODS OF BRIDGING LATERAL NANOWIRES AND DEVICE USING SAME

摘要

A semiconductor nanowire (162, 660) is grown laterally. A method of growing (100) the nanowire forms (120) a vertical surface (118a, 118b, 610, 620) on a substrate (102, 630, 690), and activates (130) the vertical surface with a nanoparticle catalyst (160, 640, 642). A method of laterally bridging (200) the nanowire grows (210) the nanaowire from the activated vertical surface to connect to an opposite vertical surface (118a, 118b, 610, 620) on the substrate. A method of connecting (300) electrodes (610, 620) of a semiconductor device (600) grows (330) the nanowire from an activated (320) device electrode to an opposing device electrode. A method of bridging (400) semiconductor nanowires grows (410, 420, 430) nanowires between an electrode pairs opposing lateral directions. A method of self-assembling (500) the nanowire bridges (530) the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity (170) in the vertical surface. An electronic device (600) includes a laterally grown nano-scale interconnection (660).