| 摘要 |
There is provided a semiconductor type 3-axis acceleration sensor having a high shock resistance, a small difference between outputs of piezoeresistance elements of X-axis, Y-axis, and Z-axis, a mall size, a high sensitivity, and a high output. A flexible arm is formed by a flexible-width wide unit and a flexible parallel unit. The flexible-width wide unit has the maximum stress portion and the piezoeresistance element is arranged on the upper surface of the flexible arm so that one end of the piezoeresistance element is arranged on the maximum stress portion. The Z-axis piezoeresistance element is arranged in the vicinity of the width center line of the flexible arm while the X-axis and Y-axis piezoelectric elements are arranged apart from the width center line. Moreover, the Z-axis piezoeresistance element is shifted in the length direction of the flexible arm from the maximum stress portion so as to reduce the output difference between the X-axis, Y-axis, and Z-axis piezoeresistance elements. |
