Method for forming shallow trench isolation film in semiconductor device,申请号KR20030002160-传众专利搜索

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发明名称	Method for forming shallow trench isolation film in semiconductor device
摘要
申请公布号	KR100499409(B1)	申请公布日期	2005.07.05
申请号	KR20030002160	申请日期	2003.01.13
申请人		发明人
分类号	H01L21/762;(IPC1-7):H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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