PROCEDE DE REALISATION PAR CVD DE NANO-STRUCTURES DE MATERIAU SEMI-CONDUCTEUR SUR DIELECTRIQUE, DE TAILLES HOMOGENES ET CONTROLEES

摘要

The production of nanostructures of semiconductor materials on a dielectric substrate comprises: (a) the formation on the substrate (12) of stable seeds (14) in the form of islets, by chemical vapor phase deposition (CVD) from a precursor (11) of a first semiconductor material; and (b) the formation of nanostructures (16A, 16B) of a second semiconductor material from the stable seeds of the first semiconductor material, by CVD from a precursor chosen to generate a selective deposition of the second semiconductor material only on the seeds. Independent claims are also included for the following: (a) nanostructures produced by the above process; and (b) a device incorporating the nanostructures.