发明名称 |
Method of fabricating bottom gate type organic thin film transistor |
摘要 |
A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.
|
申请公布号 |
US2005142496(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040009831 |
申请日期 |
2004.12.10 |
申请人 |
KANG SEUNG Y.;AHN SEONGDEOK;KIM CHUL A.;JOUNG MEYOUNG J.;SUH KYUNG S. |
发明人 |
KANG SEUNG Y.;AHN SEONGDEOK;KIM CHUL A.;JOUNG MEYOUNG J.;SUH KYUNG S. |
分类号 |
H01L29/786;G03F7/00;H01L51/00;H01L51/05;(IPC1-7):G03F7/00 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|