| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device which is reduced in an off-state current and is increased in reliability while preventing the reduction in an on-state current. SOLUTION: The thin-film semiconductor device comprises a polycrystalline silicon layer 6 including a first region 7 which is formed on the principal plane 1a of a substrate 1, and includes a first top face 7a having a first height h1 from the principal plane 1a of the substrate 1, and a second region 8 which exists on both sides of the first region 7 and includes a second top face 8a having a second height h2 from the principal plane 1a of the substrate 1 which is lower than the first height h1; a gate electrode 10 formed on the first top face 7a via a second silicon oxide film 9 as a gate insulation film; a channel region which is positioned below the gate electrode 10 and is extended in the depth direction from the first top face 7a in the first region 7; and a source and a drain region which are so positioned as to interpose the channel region in between and are extended in the depth direction from the second top face 8a in the second region 8. COPYRIGHT: (C)2005,JPO&NCIPI
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