| 摘要 |
A method for fabricating a split gate flash memory includes depositing a second conductive layer for forming a control gate on a semiconductor substrate having a first conductive layer, an insulating layer, and an oxide layer on both sides of the first conductive layer formed thereon, filling an anti-implant protective layer in a depression of the second conductive layer, performing ion implant on the second conductive layer, removing the anti-implant protective layer filled in the depression of the second conductive layer, forming a photoresist pattern by depositing a photoresist layer on the second conductive layer for forming a control gate, and treating the photoresist layer with a light exposure and a development process, and forming the control gate by etching the second conductive layer.
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