| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a sputtering target increasing the uniformity of film deposition, further increasing the purity of the components and suppressing the defects in a sputtered film, thus capable of increasing the productive efficiency by further micronizing raw material powder, further increasing the purity of the components and plating the refined raw material powder with a doping material. <P>SOLUTION: The sputtering target is obtained by sintering raw material powder in which a dopant with a mean particle diameter of ≤10 nm is precipitated by plating. Regarding the sputtering target, each impurity included in the raw material powder and the dopant is ≤5 wtppm. The raw material powder is composed of one or more kinds selected from In<SB>2</SB>O<SB>3</SB>, SnO<SB>2</SB>, ZnO, TiO<SB>2</SB>and Ga<SB>2</SB>O<SB>3</SB>. The dopant is composed of one or more kinds selected from Ti, V, Cr, Mn, Co, Fe, Ni and Cu. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
