| 摘要 |
PROBLEM TO BE SOLVED: To improve a driving force of a gate insulating p-type semiconductor device by securing an NBTI characteristic and by suppressing a punch-through of boron contained in a gate electrode. SOLUTION: In the method for manufacturing the semiconductor device, a gate insulating film 12 is formed on a semiconductor substrate 11, and a thin film polysilicon film 13 is formed on the gate insulating film 12. Nitrogen is led into the thin film polysilicon film 13 by plasma nitrification. A polysilicon film 14 is formed on the thin film polysilicon film 13 and a nitrogen containing area 15 of≤10nm depth is formed on the upper part of the polysilicon film 14 by plasma nitrification. The polysilicon film 14 is patterned to form a gate electrode 16. Thus, SD extension 17 is formed in a semiconductor substrate 11, a sidewall 20 is formed on the side face of the gate electrode 16, and then a source/drain area 21 is formed in the semiconductor substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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