| 摘要 |
The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitor (21) is connected at one end to an upstream stage bias circuit (107) via a bonding wire (B1), and grounded at the other end. Also, a chip inductor (22) is connected to a base electrode of a high-frequency signal amplification HBT (101) via a bonding wire (B2). In the high-frequency power amplifier of the present invention, the chip capacitor (21) causes noise generated within the upstream stage bias circuit (107) to flow to the ground, thereby reducing noise in the reception band. Also, the chip inductor (22) reduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground. <IMAGE> |
