| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a semiconductor by which a heated gas uniformly reaches in a stepped section and a section up to the inside of the stepped section can be heated uniformly even when there is the stepped section in the surface of a semiconductor substrate. SOLUTION: In the manufacturing method for the semiconductor rapidly heating and thermally treating the semiconductor substrate (104), the semiconductor substrate (104) is heated quickly by injecting the heated gas on the surface of the substrate (104). The manufacturing method contains lines (202 and 204) supplying a chamber (102) in which the substrate (104) is introduced with the gas, a means (205) heating the gas in the supply lines for the gas, and the means (204) injecting the heated gas on the surface of the substrate (104). COPYRIGHT: (C)2005,JPO&NCIPI
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