INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM

摘要

Disclosed is a method for forming an insulating film which has excellent resistance to processing such as etching, ashing or wet-cleaning while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a base through hydrolysis-condensation of a silane compound. Then a solution obtained by dissolving a polycarbosilane compound represented by the general formula below in a solvent is applied to the polysiloxane insulating film and the thus-applied coating is heated to form a polycarbosilane insulating film. Following that, a CVD insulating film is formed on the polycarbosilane insulating film by plasma CVD.