| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method capable of forming a trench having a shallow depth at a high aspect ratio with a high dimensional accuracy. <P>SOLUTION: A silicon substrate 150a is placed on an electrode 150, and supplied with an etching gas through a gas introducing port 120 and exhausted from an exhaust port 130, a dielectric coil 140 and the electrode 150 are supplied with a high-frequency power from high-frequency power supplies 110a and 110b respectively, the etching gas is changed into a plasma by an ICP method, active species are generated, and the etching of the silicon substrate 150a is promoted in the plasma etching method. In the plasma etching method, a mixed gas mainly comprises a CF<SB>4</SB>gas and in which an Ar gas is added to the CF<SB>4</SB>gas, and is used as the etching gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
