| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device arranged such that a fuse can be cut easily without thinning an insulation film on the fuse. SOLUTION: An nMOSFET 10 for cutting a fuse is formed on a silicon substrate 1 and a fuse F connected with the nMOSFET 10 for cutting a fuse is formed on that silicon substrate. A second interlayer insulation film 22 and a protective film 32 are then formed on the silicon substrate to cover the fuse F entirely. Subsequently, a selection is then made whether that fuse F is cut or not and a high current is fed to the fuse F selected to be cut under a state applied with a high voltage through the nMOSFET 10 for cutting a fuse thus cutting that fuse F. COPYRIGHT: (C)2005,JPO&NCIPI
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