ELECTRON BEAM OR RESIST COMPOSITION FOR EUV

摘要

PROBLEM TO BE SOLVED: To provide a resist composition and resist pattern forming method which can prevent contamination in a device in a lithography process by an electron beam or EUV(extreme-ultraviolet radiation).

SOLUTION: An organic solvent including one or more kind chosen from propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc) and 3-methyl methoxy propionate (MMP) as a main ingredient is used for a resist solvent.

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