APPARATUS FOR MANUFACTURING GALLIUM PHOSPHIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To suppress generation of lineage defects caused by the accumulation of dislocations on a line or a polycrystallization defect caused by a further developed state of the accumulation of dislocations and to improve the yield of a single crystal when a gallium phosphide single crystal having 65 to 80 mm diameter is produced by an LEC (liquid encapsulated Czochralski) method. SOLUTION: The apparatus for producing a gallium phosphide single crystal by a liquid encapsulated Czochralski method is equipped with a graphite heater which has an upper cylindrical part and a lower cylindrical part having different diameters from each other and formed into a single body. The vertical length from the lower end of a slit in the upper cylindrical part to the lower end of the lower cylindrical part of the graphite heater is 32 to 36% of the total height of the graphite heater. The height of the lower cylindrical part is 12 to 17% of the total height of the graphite heater. COPYRIGHT: (C)2005,JPO&NCIPI