| 摘要 |
The present invention relates to a method for manufacturing a flash device. After a gate electrode for a flash device is formed, an EFH of an isolation film is reduced through a predetermined etch process. It is therefore possible to reduce the step of a barrier film for protecting an isolation film. Moreover, by reducing the step of the barrier film, it is possible to prevent a condition that a contact is not opened due to the step of the barrier film upon formation of a source line contact and a drain contact. Furthermore, it is possible to sufficiently reduce an EFH of an isolation film through a sufficient etch using a mask through which only a cell region is opened.
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