发明名称 Method of manufacturing thin film element, thin film transistor circuit substrate, active matrix display device, electro-optical device, and electronic apparatus
摘要 The present invention provides an electronic circuit in which functional elements are formed on a first substrate, wiring lines are formed on a second substrate, element chips including at least one functional element are peeled from the first substrate and transferred onto the second substrate, and the second substrate is curved, a thin film transistor circuit substrate in which a thin film transistor is used as the functional element in the electronic circuit, and an active matrix display device in which the thin film transistor is used as an active matrix device in the thin film transistor circuit substrate. In cases where it is desirable to obtain a flexible electronic circuit substrate, a flexible thin film transistor circuit substrate, or a flexible active matrix display device by forming the second substrate or the wiring lines to be curved, the element chip is not peeled from the second substrate and is not split. The element chips are rectangular, and the short sides of the element chips are arranged along the curving direction of the second substrate.
申请公布号 US2005130344(A1) 申请公布日期 2005.06.16
申请号 US20040765200 申请日期 2004.01.28
申请人 SEIKO EPSON CORPORATION 发明人 KIMURA MUTSUMI
分类号 G02F1/1345;G02F1/1333;G02F1/1362;G02F1/1368;H01L21/336;H01L21/68;H01L21/77;H01L21/84;H01L23/00;H01L23/12;H01L23/538;H01L29/06;H01L29/786;(IPC1-7):H01L21/50 主分类号 G02F1/1345
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