| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a base material of a new polycrystalline silicon substrate and the polycrystalline silicon substrate, where satisfactory solar battery characteristics can be obtained, without reducing the shunt resistance, even when the base material substrate is reduced in resistance in a solar battery having a high-purity light-activated layer on the base material of the inexpensive polycrystalline silicon substrate. <P>SOLUTION: In the base material of the polycrystalline silicon substrate for the solar battery, at least on one side of a polycrystalline silicon thin plate 101, which is produced by slicing a polycrystalline silicon ingot containing a group III element of 1 to 300 atomic ppm relative to silicon, a region 107 containing a high concentration of the group III element is provided by ion implantation of the group III element or high-temperature diffusion, performed after the application of a coating of a spin-on dopant material including the group III element. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
