发明名称 |
Polysilicon thin film transistor array panel and manufacturing method thereof |
摘要 |
A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
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申请公布号 |
US6906349(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20040752510 |
申请日期 |
2004.01.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-JAE;KANG SOOK-YOUNG;KIM DONG-BYUM;LEE SU-GYEONG;KANG MYUNG-KOO |
分类号 |
H01L51/50;G09F9/30;H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/01;H01L27/08;H01L27/12;H01L27/32;H01L29/04;H01L29/786;H01L29/788;H01L31/036;H01L31/0392;H01L31/20;H05B33/14;(IPC1-7):H01L29/04 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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