发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>The gate of an IGBT is connected to a gate terminal. One end of a clamping element is connected to an anode terminal. A voltage higher than a clamping voltage is applied between the gate and the emitter, to thereby test the dielectric breakdown voltage of a gate insulating film of the IGBT. The IGBT is eliminated which has a gate insulating film at a dielectric breakdown voltage failing to fall within its proper distribution range. Thereafter, a gate terminal and an anode terminal are wire bonded in the normal IGBT.</p> |
申请公布号 |
KR20050056122(A) |
申请公布日期 |
2005.06.14 |
申请号 |
KR20040083440 |
申请日期 |
2004.10.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TADOKORO CHIHIRO;TOMOMATSU YOSHIFUMI |
分类号 |
G01R31/26;H01L21/822;H01L27/04;H01L29/78;H03K17/0812;(IPC1-7):H01L29/78 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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