| 摘要 |
A mask ( 20 ) for use in a microlithographic projection exposure apparatus ( 10 ) has a support ( 28 ) on which a pattern of opaque structures ( 32 ) is applied. The intermediate spaces ( 36, 36 ') remaining between the structures ( 32 c) are filled with a liquid or solid dielectric material ( 38, 38 '). This increases the polarisation dependency of the diffraction efficiency, so that the mask can be used as a polarizer.
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