| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of an integrated circuit. SOLUTION: The integrated circuit has a semiconductor film which is formed on a substrate, a 1st insulating film which is formed on the semiconductor film and has a through hole, a wire which is connected to the semiconductor film through the through hole and formed on the 1st insulating film, a passivation film which is formed on the wire, and a 2nd insulating film which is formed in contact with the passivation film and includes a siloxane structure. COPYRIGHT: (C)2005,JPO&NCIPI |
