| 摘要 |
PROBLEM TO BE SOLVED: To provide a static induction transistor that can make the on/off ratio relatively large, and in addition, the drain current relatively large. SOLUTION: The static induction transistor has an active layer 4 containing a plurality of gates 1 and used as a channel forming area, and a source 2 and a drain 3 formed to pinch the active layer 4. Each gate 1 is formed in the active layer 4, to control the formed state of a channel in the channel forming area, by expanding and contracting to and from a depletion area surrounding the gate 1, upon receiving the control for the voltage impressed upon the gate 1. The gates 1 are distributed in the active layer 4, in such a uniform state and density that almost the entire surrounding area of each gate 1 can contribute to the on/off of the channel. COPYRIGHT: (C)2005,JPO&NCIPI
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