| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously achieve the reduction in stand-by current and an increase in driving force. SOLUTION: Where xj is a depth from an interface between a silicon substrate and a gate insulation layer and Dch is the dopant concentration of an n-type dopant in a channel region, Dch is set to 2.0×10<SP>17</SP>cm<SP>-3</SP>≤Dch≤3.0×10<SP>17</SP>cm<SP>-3</SP>for 2.0×10<SP>-8</SP>cm≤xj≤3.0×10<SP>-8</SP>m (region A), and Dch is set to 3.0×10<SP>17</SP>cm<SP>-3</SP>≤Dch≤4.0×10<SP>17</SP>cm<SP>-</SP>3 for 3.0×10<SP>-8</SP>m≤xj≤4.0×10<SP>-8</SP>m (region B), and Dch is set to 4.0×10<SP>17</SP>cm<SP>-3</SP>≤Dch≤6.0×10<SP>17</SP>cm<SP>-3</SP>for xj≥4.0×10<SP>-8</SP>m (region C). COPYRIGHT: (C)2005,JPO&NCIPI
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