| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of forming a large hollow or a space having a complicated configuration with high formal accuracy by etching a sacrificial layer through a very small etching opening. SOLUTION: A work as an object of processing is exposed to a processing fluid containing an etching reactant so as to undergo an etching treatment (a third step S3, a fourth step S4), and thereafter a processing chamber is reduced in internal pressure so as to make the processing fluid near the work lower in density than that at the fourth step S4 (a first step S1). When these steps S1 to S4 are repeatedly carried out, the new processing fluid containing the etching reactant is supplied to a processing atmosphere where the work is arranged at the steps S3 and S4 which are carried out after the first step S1, so that the processing fluid near the work is increased in density than that at the first step S1. COPYRIGHT: (C)2005,JPO&NCIPI
|
