发明名称 |
Oxide interface and a method for fabricating oxide thin films |
摘要 |
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
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申请公布号 |
US6902960(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20020295400 |
申请日期 |
2002.11.14 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
JOSHI POORAN CHANDRA;HARTZELL JOHN W.;ADACHI MASAHIRO;ONO YOSHI |
分类号 |
H01L21/316;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/316 |
代理机构 |
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